EMD6 |
RFQ for EMD6 Required Field |
 |
| Technical/Catalog Information | EMD6T2R |
| Vendor | Rohm Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Current - Collector (Ic) (Max) | 100mA |
| Power - Max | 150mW |
| Resistor - Base (R1) (Ohms) | 4.7K |
| Resistor - Emitter Base (R2) (Ohms) | - |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250A, 5mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Frequency - Transition | 250MHz |
| Mounting Type | Surface Mount |
| Package / Case | EMT6 |
| Packaging | Tape & Reel (TR) |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | EMD6T2R EMD6T2R EMD6T2RTR ND EMD6T2RTRND EMD6T2RTR |
| Product | Manufacturers | Pack | D/C |
| EMD6 | - | SOT-6 | 0302+ |
Features |
| 1) Both the DTA143T chip and DTC143T chip in an EMT or UMT or SMT package.2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines.3) Transistor elements are independent, eliminating interference.4) Mounting cost and area can be cut in half. |
|
Parameter |
Symbol |
Limits |
Unit | |
| Collector-base voltage |
VCBO |
50 |
V | |
| Collector-emitter voltage |
VCEO |
50 |
V | |
| Emitter-base voltage |
VEBO |
5 |
V | |
| Collector current |
IC |
100 |
mA | |
| Collector power dissipation |
EMD6, UMD6N |
PC |
150(TOTAL) |
mW |
| IMD6A |
300(TOTAL) | |||
| Junction temperature |
Tj |
150 |
°C | |
| Storage temperature |
Tstg |
-55~+150 |
°C | |
